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HAT1044M
Silicon P Channel Power MOS FET Power Switching
REJ03G1152-0600 (Previous: ADE-208-753D) Rev.6.00 Sep 07, 2005
Features
* * * * Low on-resistance Low drive current High density mounting 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PTSP0006FA-A (Package name: TSOP-6)
1256 DDDD 4
3
6
5
3 G
1
2
4 3 1, 2, 5, 6
Source Gate Drain
S 4
Rev.6.00 Sep 07, 2005 page 1 of 3
HAT1044M
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID
Note 2 Note 1
Value -30 20 -4.5 -18 -4.5 2.0 1.05 150 -55 to +150
Unit V V A A A W W C C
ID (pulse) Note 2 IDR
Pch (pulse) Note 3 Pch (continuous) Tch Tstg
Note 2
Notes: 1. PW 10 s, duty cycle 1% 2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW 5 s, Ta = 25C 3. When using the alumina ceramic board (50 x 50 x 0.7 mm), Ta = 25C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min -30 -- -- -1.0 -- -- 3 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 50 80 5.5 600 220 150 13 2 3 12 85 55 55 -0.95 50 Max -- 0.1 -1 -2.5 60 105 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns IF = -4.5 A, VGS = 0 IF = -4.5 A, VGS = 0 diF/dt = -20 A/s
Note 4
Test Conditions ID = -10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, ID = -1 mA Note 4 ID = -3 A, VGS = -10 V ID = -3 A, VGS = -4.5 V Note 4 ID = -3 A, VDS = -10 V VDS = -10 V VGS = 0 f = 1 MHz VDS = 10 V VGS = 0 f = 1 MHz VGS = -10 V, ID = -3 A, RL = 3.3
Note 4
Rev.6.00 Sep 07, 2005 page 2 of 3
HAT1044M
Package Dimensions
JEITA Package Code SC-95 Modified RENESAS Code PTSP0006FA-A Package Name TSOP-6 / TSOP-6V MASS[Typ.] 0.012g
D e
A Q c
E
HE
L L1 A A xM S A b e A3
LP
Reference Symbol Dimension in Millimeters
A2
A
yS
A1 S
e1
b b1 c A-A Section c1
I1
b2 Pattern of terminal position areas
A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x y b2 e1 I1 Q
Min 0.8 0 0.8 0.25 0.1 2.8 1.45 2.6 0.3 0.1 0.2
Nom
0.9 0.25 0.32 0.3 0.13 0.11 2.95 1.6 1.0 2.8
Max 1.1 0.1 1.0 0.4 0.15 3.1 1.75 3.0 0.7 0.5 0.6 0.05 0.05 0.45 0.8
2.2 0.2
Ordering Information
Part Name Quantity Shipping Container HAT1044M-EL-E 3000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.6.00 Sep 07, 2005 page 3 of 3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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